Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

Point Contact Resistive Switching Memory Based On, 44% OFF

Resistive random access memory: introduction to device mechanism

Facilitation of the thermochemical mechanism in NiO-based

Resistive random access memory: introduction to device mechanism

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer

Voltage and Power-Controlled Regimes in the Progressive Unipolar

Picosecond multilevel resistive switching in tantalum oxide thin

Frontiers Memristive TiO2: Synthesis, Technologies, and Applications

Nanomaterials, Free Full-Text